1.0(25.4) min. 1.0(25.4) min. .375(9.5) .285(7.2) .052(1.3) .048(1.2) dia. .220(5.6) .197(5.0) dia. * 1 r e p e t i t i v e p e a k r e v e r s e v o l t a g e * 2 r m s v o l t a g e * 3 c o n t i n u o u s r e v e r s e v o l t a g e * 4 m a x i m u m f o r w a r d v o l t a g e @ i = 8 . 0 a f p a r a m e t e r c o n d i t i o n s f o r w a r d r e c t i f i e d c u r r e n t f o r w a r d s u r g e c u r r e n t r e v e r s e c u r r e n t t h e r m a l r e s i s t a n c e d i o d e j u n c t i o n c a p a c i t a n c e s e e f i g . 2 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e l o a d ( j e d e c m e t h o d e ) s y m b o l m i n . t y p . m a x . u n i t i o i f s m i r c j a a m a o c / w p f 8 . 0 1 5 0 0 . 5 3 0 o v = v t = 2 5 c r r r m j o v = v t = 1 0 0 c r r r m j j u n c t i o n t o a m b i e n t 5 5 0 5 0 r j a mbr820ng MBR830NG mbr840ng 1 4 2 1 2 8 2 0 3 0 4 0 s y m b o l s v r r m ( v ) v r m s v r ( v ) ( v ) * 1 * 2 * 3 v f ( v ) * 4 mbr850ng mbr860ng 3 5 4 2 5 0 6 0 0 . 7 0 - 5 5 t o + 1 2 5 mbr880ng mbr8100ng 8 0 1 0 0 5 6 7 0 2 0 3 0 4 0 5 0 6 0 8 0 1 0 0 s t o r a g e t e m p e r a t u r e f = 1 m h z a n d a p p l i e d 4 v d c r e v e r s e v o l t a g e t s t g o c + 1 7 5 - 6 5 o ( c ) o p e r a t i n g t e m p e r a t u r e t , j 0 . 5 5 0 . 8 5 - 5 5 t o + 1 5 0 mbr820ng thru mbr8100ng schottky barrier rectifier 8.0a leaded type schottky barrier rectifiers - 20v-100v do-201ad package outline dimensions in inches and (millimeters) features axial lead type devices for through hole design. low power loss, high efficiency. high current capability, low forward voltage drop. high surge capability. ultra high-speed switching. lead-free parts meet environmental standards of mil-std-19500 /228 ? ? guardring for overvoltage protection. suffix "-h" indicates halogen free parts, ex. mbr820ng-h. ? ? ? ? ? silicon epitaxial planar chip, metal silicon junction. ? ? mechanical data epoxy:ul94-v0 rated flame retardant case : molded plastic, terminals : solder plated, solderable per mil-std-202, method 208 guranteed polarity :color band denotes cathode end mounting position : any weight : 1.10 gram ? ? ? ? ? ? do-201ad approximated maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor
0.1 1.0 .01 10 50 fig.1-typical for w ard current dera ting cur ve a verage for w ard current ,(a) inst ant aneous for w ard current ,(a) for w ard vol t age,(v) pulse width 300us 1% duty cycle 2.0 4.0 6.0 8.0 10 .1 .3 .5 .7 .9 1.1 1.3 1.5 .1 1.0 10 100 fig.5 - typical reverse characteristics reverse leakage current , (ma) 0 20 40 60 80 100 120 140 .01 t =100 c j t =25 c j t =25 c j lead tempera ture,( c) 0 0 20 40 60 80 100 120 140 160 180 200 fig.2-typical for w ard characteristics percent of ra ted peak reverse vol t age,(%) fig.3-maximum non-repetitive for w ard surge current fig.4-typical junction cap acit ance reverse vol t age,(v) junction cap acit ance,(pf) 1000 1200 1400 800 600 400 200 0 .01 .05 .1 .5 1 5 10 50 100 60 30 0 90 150 120 number of cycles a t 60hz 1 10 5 50 100 t =25 c j 8.3ms single half sine w ave jedec method peak for w ard surge current ,(a) 80~100v 20~40v 50~60v mbr820ng~mbr840ng mbr850ng~mbr8100ng mbr820ng thru mbr8100ng page 2/2 www.first-semi.com rating and characteristic curves
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